The PE562212 is a high-performance, fully integrated FEM designed for Thread and Zigbee® applications as well as Bluetooth® (including Bluetooth Low Energy). The PE562212 is also capable of low-to-medium Wi-Fi® throughput for devices that require FW upgrades or applications with the need for increased data traffic. The PE562212 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-on insulator (SOI) technology.
The PE562212 is a high-performance, fully integrated FEM designed for Thread and Zigbee® applications as well as Bluetooth® (including Bluetooth Low Energy). The PE562212 is also capable of low-to-medium Wi-Fi® throughput for devices that require FW upgrades or applications with the need for increased data traffic. The PE562212 is manufactured on pSemi’s UltraCMOS® process, a patented advanced form of silicon-on insulator (SOI) technology.
Description | 2.4 GHz SOI IoT FEM |
Min Freq. | 2400 MHz |
Max Freq. | 2483.5 MHz |
P1dB/P0.1dB (dBm) | 21.0 / – |
Attn Range (dB) | 0–15 |
Attn Step (dB) | 1 |
Tx Gain (dB) | 23 |
Rx Gain (dB) | 15 |
VDD Range (V) | 3.0–3.6 |
Package | 14L LGA |
Package (mm) | 1.8×1.8×0.63 |
Operating Frequency (GHz) | 2.4 |
Tx Gain Control (dB) | 15 |
Tx Gain Step (dB) | 1 |
Rx NF (dB) | 1.6 |
Bypass Loss (dB) | -0.6 |
Supply Voltage (V) | 3.0–3.6 |
PSAT (dBm) | 24 |
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